PD57018TR-E

PD57018TR-E

$27.15
  • Description:RF MOSFET LDMOS 28V POWERSO-10RF
  • Series:-

SKU:52045ce5406f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V POWERSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):2.5A
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:18W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package:PowerSO-10RF (Formed Lead)
  • Configuration:-

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PD57018TR-E

Overview

The PD57018TR-E is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor manufactured by STMicroelectronics. It operates at a test voltage of 28 V with a continuous drain current of 2.5 A and a maximum rated voltage of 65 V. The device delivers an output power of 18 W with a gain of 16.5 dB at 945 MHz. It features a PowerSO-10RF package with formed leads, designed for broad band commercial and industrial applications up to 1 GHz. The component supports a power dissipation of 31.7 W and functions within an operating temperature range from -65°C to +150°C.

Feature Summary

  • Common source configuration providing excellent thermal stability
  • New RF plastic package suitable for all reflow soldering methods
  • High power density design optimized for surface-mount applications

Applications

  • Broadband commercial RF amplification
  • Industrial RF signal processing
  • General purpose RF power stages up to 1 GHz

Procurement Notes

Verify the specific ordering suffix to confirm packaging type. The TR-E suffix indicates tape and reel delivery, whereas the non-trailing variant typically uses tube packaging. Confirm RoHS compliance status and Ecopack2 designation during procurement to ensure adherence to environmental standards required for the target assembly process.

Selection Notes

Select this component when designing circuits requiring high gain and broad bandwidth in the VHF/UHF range. Ensure the PCB layout accommodates the exposed bottom pad of the PowerSO-10RF package for effective heat dissipation. Verify that the gate drive circuitry supports the 20 V maximum gate-source voltage limit under all operating conditions.

Part Context

This part belongs to the RFXL series of RF power LDMOS transistors from STMicroelectronics. It utilizes the PowerSO-10RF package, which was developed to provide superior thermal performance and power density compared to traditional bipolar technologies. The series targets applications needing reliable surface-mount solutions for RF power generation.

Replacement Considerations

The PD57018-E serves as the tube-packaged equivalent of this component. Both variants share identical electrical characteristics and functionality. Selection between them depends solely on manufacturing automation requirements rather than performance differences.

PD57018TR-EPD57018TR-E
$27.15
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