PD57030-E

Overview

The PD57030-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high gain and broad band commercial and industrial applications. Operating in common source mode at 28 V up to 1 GHz, it delivers 30 W output power with 14 dB gain at 945 MHz. The device utilizes ST’s LDMOS technology within the PowerSO-10RF package, a JEDEC-approved SMD format optimized for RF performance and thermal stability.

Feature Summary

• Excellent thermal stability
• Common source configuration
• New RF plastic package

Applications

• Base station applications requiring high linearity
• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status and Ecopack2 packaging details. Check current production status as active. Ensure proper handling due to moisture sensitivity classification. Validate supply chain documentation against official manufacturer records.

Selection Notes

Select this component for designs requiring 30 W output power at 945 MHz. Consider the PowerSO-10RF package for surface mount assembly. Evaluate thermal management requirements given the lateral MOSFET structure. Verify compatibility with 28 V supply voltage and 1 GHz frequency limits.

Part Context

Part of the LdmoST plastic family featuring N-channel enhancement-mode lateral MOSFETs. Designed by STMicroelectronics for RF power applications. Utilizes advanced LDMOS technology mounted in a true SMD plastic RF power package. Offers improved reliability compared to traditional packages.

Replacement Considerations

PD57030 serves as a predecessor variant. SD57030 offers similar specifications with internal input matching and BeO-free construction. PD57045-E provides higher output power at 45 W. Verify pinout and thermal characteristics before substitution.