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The PD57045S-E is an N-channel enhancement-mode lateral RF power transistor from STMicroelectronics, utilizing LdmoST technology. It operates at a frequency of 1 GHz with a drain-source breakdown voltage of 65 V and a gate-source voltage of +20 V. The device delivers 45 W of output power with a gain of 13 dB and a continuous drain current of 5 A. It features a PowerSO-10RF-Straight-4 surface-mount package, supports a maximum operating temperature of +150 C, and has a power dissipation rating of 52.8 W.
Verify the specific suffix 'E' against the manufacturer's official documentation to confirm compliance with RoHS directives and material specifications. Ensure that the PowerSO-10RF-Straight-4 package variant matches the required PCB footprint and lead configuration for your assembly process. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before finalizing procurement orders.
Select this component when designing circuits requiring high linearity and broad bandwidth in the VHF/UHF spectrum. The lateral MOSFET structure offers robustness against load mismatches compared to vertical devices. Consider the 65 V breakdown voltage and 5 A current rating to ensure adequate headroom for your specific power supply rails and impedance matching networks within the target application environment.
This device belongs to the PD57030/45 series of LdmoST plastic family transistors. It shares architectural similarities with the PD57030S-E but provides higher output power. The series is optimized for commercial applications where stable gain and wide bandwidth are critical requirements for reliable RF signal transmission and amplification.
The PD57045S (non-E suffix) is a potential alternative if environmental compliance differences are acceptable. Verify pinout compatibility and thermal characteristics before substitution.