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The PD57045S is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST family. It operates at 28 V in common source mode up to 1 GHz, delivering 45 W output power with 13 dB gain at 945 MHz. The device features a PowerSO-10RF straight lead package and offers excellent thermal stability. Key electrical parameters include a drain-source breakdown voltage of 65 V, maximum junction temperature of 165 °C, and a junction-to-case thermal resistance of 1.2 °C/W.
Verify component status as the datasheet indicates this product is obsolete. Confirm availability through authorized distributors or secondary market suppliers. Ensure compatibility with existing designs before procurement due to potential supply chain discontinuation.
Select based on required output power and frequency range up to 1 GHz. Consider the straight lead PowerSO-10RF package for assembly compatibility. Evaluate thermal management solutions given the 1.2 °C/W thermal resistance to maintain junction temperature within safe operating limits.
This component belongs to the STMicroelectronics LdmoST plastic family. It utilizes advanced LDMOS technology mounted in a JEDEC approved high power SMD package optimized for RF needs. The straight lead variant differs from formed lead versions in physical mounting characteristics while maintaining identical electrical specifications.
Public confirmed substitute part numbers are not available in the provided documentation. Verify if other members of the PD57045 series or similar LdmoST family devices meet specific design requirements.