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The PD57060STR-E is an N-channel, enhancement-mode lateral field-effect RF power MOSFET from STMicroelectronics. It utilizes LDMOST technology in a PowerSO-10RF-Formed-4 package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V, continuous drain current (Id) of 7 A, and gate-source voltage (Vgs) of +20 V. The device delivers 60 W output power with 14.3 dB gain at 945 MHz/28 V. It operates up to 1 GHz, with a power dissipation (Pd) of 79 W. Operating temperature ranges from -65°C to +150°C.
Verify the specific suffix 'STR' against official STMicroelectronics documentation to confirm it corresponds to the reel packaging variant of the PD57060 series. Ensure compatibility with the PowerSO-10RF-Formed-4 footprint. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly.
Select this component for designs requiring 60 W output power at frequencies up to 1 GHz. The 65 V Vds rating supports standard 28 V operation. Consider the PowerSO-10RF package for surface mount integration. Verify thermal management requirements given the 79 W power dissipation capability.
This part belongs to the PD57060S-E family of RF power transistors. It shares core electrical characteristics with the PD57060S-E but differs in packaging format. The STR suffix typically indicates tape and reel delivery, whereas the S-E suffix often denotes tube packaging. Both utilize the same LDMOST silicon die.
PD57060S-E is the equivalent part number within the same family, differing primarily in packaging type (Tube vs Reel). Electrical specifications remain identical.