PD57070-E

Overview

The PD57070-E is an N-channel enhancement-mode lateral MOSFET from the LDMOST plastic family, designed for high-gain, broadband commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a continuous drain current of 7 A, a drain-source breakdown voltage of 65 V, and a gate-source voltage limit of +20 V. The device delivers 70 W output power with 14.7 dB gain at 945 MHz/28 V. Power dissipation is rated at 79 W, with an operating temperature range from -65 °C to +150 °C. It utilizes the PowerSO-10RF-Straight-4 surface-mount package.

Feature Summary

• Common source configuration for high gain and broad band applications
• Excellent thermal stability inherent to LDMOS technology
• Designed for reliability in commercial and industrial RF environments

Applications

• Broadband commercial RF amplification
• Industrial RF power generation
• High gain linear amplifier stages

Procurement Notes

Verify the exact suffix against official STMicroelectronics documentation, as variations like PD57070S-E may exist. Confirm RoHS compliance status and humidity sensitivity handling requirements prior to assembly. Ensure the specific ordering code matches the required package variant and manufacturing date code for supply chain traceability.

Selection Notes

Select this component for designs requiring 70 W output power at 28 V bias near 1 GHz. Compare gain and linearity metrics against similar LDMOS devices if higher frequency or different power levels are needed. Verify that the PowerSO-10RF package thermal management capabilities meet the system's heat dissipation requirements for continuous operation.

Part Context

This part belongs to the PD570xx series of RF power transistors from STMicroelectronics. These devices utilize lateral DMOS technology optimized for plastic packaging, offering a balance of performance and ease of integration compared to ceramic packages. The series targets cost-sensitive broadband applications where standard SMT processes are preferred.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Evaluate other members of the PD570xx series or comparable LDMOS RF transistors from other manufacturers only after verifying pinout compatibility and electrical parameter equivalence.