PD57070S-E

PD57070S-E

  • Description:RF MOSFET LDMOS 28V POWERSO-10RF
  • Series:-

SKU:87f861fdf19a Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V POWERSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:14.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):7A
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:70W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package:PowerSO-10RF (Straight Lead)
  • Configuration:-

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PD57070S-E

Overview

The PD57070S-E is an N-channel, enhancement-mode lateral MOSFET from the LDMOST plastic family by STMicroelectronics. Designed for high gain and broad band commercial and industrial applications, it operates at 28 V in common source mode up to 1 GHz. Key electrical parameters include a continuous drain current of 7 A, a drain-source breakdown voltage of 65 V, and a gate-source voltage limit of +20 V. The device delivers 70 W output power with 14.7 dB gain at 945 MHz/28 V. It features a power dissipation rating of 79 W and operates within a temperature range of -65 °C to +150 °C. The component is housed in a PowerSO-10RF-Straight-4 surface mount package.

Feature Summary

  • Common source configuration optimized for high gain and linearity
  • Excellent thermal stability inherent to LDMOS technology
  • Designed for broad band commercial and industrial RF applications

Applications

  • Broad band commercial RF amplification
  • Industrial RF signal processing
  • High gain RF power stages operating up to 1 GHz

Procurement Notes

Verify the specific ordering suffix and manufacturing date code against the official STMicroelectronics datasheet before procurement. Confirm that the PowerSO-10RF-Straight-4 package matches the design footprint requirements. Ensure compliance with RoHS directives as specified in the product documentation. Check for any recent Product Change Notifications (PCN) that may affect pinout or material composition. Validate supply chain authenticity through authorized distributors.

Selection Notes

Select this component when a high-power RF solution requiring 70 W output at 28 V is needed. The 14.7 dB gain at 945 MHz makes it suitable for broadband applications. Consider the PowerSO-10RF package for SMD assembly needs. Compare against lower power variants like PD57060S-E if 60 W is sufficient. Ensure the system can handle the 79 W power dissipation with adequate thermal management.

Part Context

The PD57070S-E belongs to the PD570xxS-E series of RF power transistors. This series utilizes ST's LDMOST plastic technology, offering a balance of performance and cost-effectiveness for RF applications. The 'E' suffix typically denotes environmental compliance. It shares the same PowerSO-10RF package form factor as other members in the family, facilitating potential design-in flexibility across different power levels.

Replacement Considerations

PD57070S is a non-compliant variant within the same family. PD57060S-E offers 60 W output power with similar characteristics. PD57030S-E provides 30 W output power. Verify pin compatibility and thermal requirements when substituting.

PD57070S-EPD57070S-E

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