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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V POWERSO10
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Technology：LDMOS
- Frequency：945MHz
- Gain：14.7dB
- Voltage - Test：28 V
- Current Rating (Amps)：7A
- Noise Figure：-
- Current - Test：250 mA
- Power - Output：70W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PowerSO-10 Exposed Bottom Pad
- Supplier Device Package：10-PowerSO
- Configuration：-
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Overview
The PD57070S is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST Plastic Family. It operates at 28 V in common source mode up to 1 GHz. Key electrical specifications include a drain-source breakdown voltage of 65 V, continuous drain current of 7 A, and gate-source voltage of ±20 V. At 945 MHz with 28 V supply and 250 mA bias, it delivers 70 W output power with 14.7 dB gain and 50% efficiency. The device features a junction-to-case thermal resistance of 1.0 °C/W and is housed in a PowerSO-10RF-Straight-4 package.
Feature Summary
- High linearity performance suitable for base station applications
- Excellent thermal stability with low junction-to-case thermal resistance
- Common source configuration optimized for broad band commercial use
Applications
- Broadband commercial applications
- Industrial applications
- Base station amplifiers
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or verified suppliers. Confirm RoHS compliance status and check for obsolete product notices before procurement. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate datasheet revisions against the specific manufacturing lot date code.
Selection Notes
Select this component for designs requiring high gain and broad bandwidth operation near 945 MHz. Ensure the circuit can support the required 28 V supply and manage the 95 W power dissipation capability. Verify that the PCB layout accommodates the PowerSO-10RF package dimensions and thermal requirements for optimal heat sinking.
Part Context
This part belongs to the LdmoST Plastic Family of RF power transistors. It utilizes ST's lateral DMOS technology mounted in a JEDEC-approved SMD plastic package. The 'S' suffix denotes the straight lead variant of the PowerSO-10RF package, distinguishing it from formed lead versions.
Replacement Considerations
PD57070 (formed lead version)
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 165 °C.
Does the PD57070S require internal matching networks?
No, the datasheet does not specify internal input matching; external impedance matching based on provided Zin data is required.
What is the typical load mismatch tolerance?
The device is rated to withstand a 5:1 VSWR load mismatch at all phase angles when operating at 70 W output power.
