PD84006L-E

Overview

The PD84006L-E is an N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. It utilizes LDMOS technology and operates at a drain-source voltage of 25 V with a continuous drain current of 7 A. The device delivers 2 W output power with 15 dB gain at 870 MHz, tested at 150 mA. It functions up to 1 GHz and dissipates 26.7 W of power. The component is housed in a PowerFLAT (5x5) package, rated for temperatures between -65 C and +150 C, and features a maximum gate-source voltage of +15 V.

Feature Summary

• Common source configuration designed for high gain and broadband commercial applications
• Superior linearity performance suitable for portable radio and UHF RFID reader solutions
• ESD protection integrated within the JEDEC approved plastic SMD package

Applications

• Portable radio systems
• UHF RFID readers
• Broadband commercial and industrial RF applications

Procurement Notes

Verify the obsolete status and NRND classification before integration. Confirm availability through authorized channels as standard stock may be limited. Ensure compliance with RoHS3 specifications during procurement. Validate that the PowerFLAT package matches the target PCB footprint requirements. Review the datasheet for handling precautions related to moisture sensitivity level 3.

Selection Notes

Select this component for designs requiring 2 W output at 870 MHz with 15 dB gain. The 25 V breakdown voltage supports 7 V operating conditions typical for UHF bands. Consider the 8-PowerVDFN package for thermal management needs. Evaluate the 1 GHz frequency limit against specific application bandwidths. Compare linearity requirements against alternative LDMOS devices in the same series.

Part Context

This part belongs to the PD84006 family of RF power transistors from STMicroelectronics. It shares design characteristics with the PD84006-E but utilizes the PowerFLAT package instead of the PowerSO-10RF. The device represents ST's LDMOS technology optimized for SMD assembly. It serves as a successor or variant to earlier plastic package RF transistors in the portfolio.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.