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The PD84008L-E is an N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. It utilizes LDMOS technology in a PowerFLAT (5x5) SMD package. Key electrical parameters include a drain-source breakdown voltage of 25 V, continuous drain current of 7 A, and maximum power dissipation of 26.7 W. The device operates at frequencies up to 1 GHz, delivering 8 W output power with 13 dB gain. It functions within a temperature range of -65°C to +150°C and supports a gate-source voltage of +15 V.
Verify component authenticity through authorized channels as the part status is obsolete. Confirm RoHS compliance details via official documentation before integration. Check for moisture sensitivity handling requirements during storage and assembly processes to ensure reliability.
Select this component for designs requiring high linearity and thermal stability in portable radio contexts. Ensure the circuit supports the specified 25 V breakdown and 7 A current limits. Verify that the PCB layout accommodates the PowerFLAT (5x5) footprint for optimal heat dissipation.
This transistor belongs to the PD84008 family of LDMOS RF power devices. It shares functional similarities with the PD54008L-E but differs in operating voltage and package type. The PD84008S-E offers a similar performance profile in a PowerSO-10RF package. These components are designed for common source RF power amplification.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consider evaluating the PD54008L-E or PD84008S-E for potential compatibility, subject to rigorous electrical and mechanical verification.