SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PD84008S-E is an N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. It operates at a drain-source voltage of 25 V and delivers 2 W output power with 16.2 dB gain at 870 MHz under 7.5 V bias. The device features a continuous drain current of 7 A and handles up to 250 mA during testing conditions. It utilizes the PowerSO-10RF straight lead package for surface mount installation. Thermal performance includes a maximum power dissipation of 26.7 W, supporting operation between -65°C and +150°C.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing lot requirements. Validate package integrity against moisture sensitivity level 3 handling protocols before soldering. Ensure supplier provides traceable origin records for quality assurance purposes.
Select this component when 2 W output power at 870 MHz fits system constraints. Consider the 25 V breakdown voltage for low-voltage RF environments. Evaluate thermal management needs given the 26.7 W dissipation rating in the PowerSO-10RF package. Compare gain characteristics against alternative LDMOS devices for linear amplifier designs.
This part belongs to the PD84008 series of RF power transistors from STMicroelectronics. It represents an evolution in LDMOS technology mounted in SMD plastic packages. The series targets portable radio applications where size and linearity are critical. It shares design principles with other members like the PD84008L-E but differs in packaging and specific electrical parameters.
Publicly confirmed substitute part numbers are not available in verified sources. The PD84008L-E offers similar electrical performance but uses a PowerFLAT (5x5) package instead of PowerSO-10RF. Designers must account for significant footprint and pinout differences when considering cross-package alternatives.