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The PD84010-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for high gain and broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies up to 1 GHz. The device delivers 10 W output power with 14.3 dB gain at 870 MHz under 7.5 V conditions. It utilizes ST’s LDMOS technology mounted in the PowerSO-10RF plastic package, which is JEDEC approved and optimized for RF performance and assembly ease.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific environmental directive adherence such as 2002/95/EC. Review datasheet revisions for metallization changes like AlSiCu to AlCu transitions. Ensure handling procedures account for moisture sensitivity classification during storage and reflow processes.
Select this component for designs requiring 10 W output power at 870 MHz with 14.3 dB gain. Ensure the circuit supports 7.5 V common source operation within the 1 GHz frequency range. Verify PCB layout compatibility with the PowerSO-10RF package dimensions. Consider thermal management requirements due to the plastic package construction and high power density.
The PD84010-E belongs to the PD84010 series from STMicroelectronics. It represents an integration of advanced LDMOS technology into a surface-mount plastic package. This design addresses the need for reliable RF power amplification in compact form factors suitable for portable and industrial equipment.
Check for end-of-life notifications or discontinuation notices. Verify if PD84010TR-E serves as a tape-and-reel variant with identical electrical characteristics. Evaluate alternative LDMOS transistors from ST or other manufacturers only if pin-compatible and meeting the same 10 W / 14.3 dB @ 870 MHz specifications.