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Product Detailed Parameters
- Description：RF MOSFET LDMOS 13.6V PWRSO-10RF
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：870MHz
- Gain：17dB
- Voltage - Test：13.6 V
- Current Rating (Amps)：2A
- Noise Figure：-
- Current - Test：200 mA
- Power - Output：5W
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package：PowerSO-10RF (Formed Lead)
- Configuration：-
Download product information
Overview
The PD85006TR-E is an N-channel, enhancement-mode lateral metal-oxide-semiconductor field-effect transistor (LDMOS) designed for radio frequency power applications. It operates at a test voltage of 13.6 V and delivers an output power of 6 W with a gain of 17 dB at a frequency of 870 MHz. The device features a continuous drain current rating of 2 A and a maximum drain-source voltage of 40 V. It is housed in a PowerSO-10 package with an exposed bottom pad to facilitate thermal management and surface-mount assembly.
Feature Summary
- Utilizes LDMOS technology for high linearity and reliability in RF environments
- Designed for broadband commercial and industrial applications up to 1 GHz
- Features a plastic PowerSO-10 package optimized for RF performance and ease of assembly
Applications
- Portable radio systems
- UHF RFID readers
- Broadband RF amplification circuits
Procurement Notes
Verify component authenticity through authorized channels as the part status is obsolete. Confirm RoHS compliance and moisture sensitivity level prior to handling. Ensure supply chain documentation matches the specific ordering suffix to guarantee correct packaging configuration.
Selection Notes
Select this component for designs requiring moderate RF power output with high gain characteristics. Consider the PowerSO-10 package constraints for thermal dissipation requirements. Evaluate compatibility with existing PCB layouts designed for standard SMD RF transistors within the specified frequency range.
Part Context
This component belongs to the PD85006 series of RF power transistors manufactured by STMicroelectronics. It shares architectural similarities with other devices in the PD85xx family, offering comparable LDMOS performance metrics adapted for specific power and gain requirements in compact surface-mount configurations.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official manufacturer resources or authorized distributors for validated cross-reference data regarding obsolete components.
