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The PD85015TR-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high gain and broadband commercial applications. It operates at frequencies up to 1 GHz with a drain-source voltage of 40 V and a continuous drain current of 5 A. The device delivers 15 W output power with 16 dB gain at 870 MHz under 13.6 V supply conditions. It features excellent thermal stability and ESD protection within a PowerSO-10RF package.
Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm RoHS compliance status via ECOPACK specifications on the manufacturer website. Ensure storage conditions respect humidity sensitivity requirements prior to assembly.
Select this component for designs requiring high linearity and gain in the 1 GHz range. Verify that the operating junction temperature remains below 165 °C. Ensure the circuit design accommodates the 13.6 V common source operation mode for optimal performance.
This part belongs to the PD85015-E series, which includes variants like PD85015S-E and PD85015STR-E. These devices share the same core LDMOS technology but differ in packaging lead styles (formed vs. straight) and reel/tube configurations.
PD85015-E (Tube)
The maximum operating junction temperature is 165 °C.
Yes, it includes ESD protection rated at Class 2 for the Human Body Model and M3 for the Machine Model.
The typical gain is 16 dB when delivering 15 W output power at 870 MHz with a 13.6 V supply.