PD85025-E

PD85025-E

$15.44
  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-

SKU:bbc84a64b1b2 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:LDMOS
  • Frequency:870MHz
  • Gain:17.3dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):7A
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:10W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package:PowerSO-10RF (Formed Lead)
  • Configuration:-

Download product information

PD85025-E

Overview

The PD85025-E is an N-channel LDMOS RF power transistor manufactured by STMicroelectronics. It operates within a frequency range of 340 to 520 MHz and utilizes a PowerSO-10RF package. The device supports a supply voltage of 15 V, delivering an output power of 10 WPEP with a minimum gain of 16.5 dB. Key electrical specifications include a drain current of 1.25 A at full power, third-order intermodulation distortion (IMD3) below -27 dBc, and a load mismatch tolerance of 20:1 VSWR.

Feature Summary

  • Designed for UHF OFDM and two-way mobile radio applications
  • Provides excellent thermal stability under operational conditions
  • Constructed as a BeO-free amplifier for environmental compliance

Applications

  • UHF OFDM systems
  • Two-way mobile radios

Procurement Notes

Verify the specific revision status and availability directly with STMicroelectronics or authorized distributors before initiating procurement. Confirm that the component meets all necessary regulatory requirements for the intended deployment region. Ensure proper handling procedures are followed due to moisture sensitivity classification. Review the datasheet for any recent product change notifications that may affect performance or physical dimensions.

Selection Notes

Select this component for designs requiring stable RF amplification in the 340 to 520 MHz band. Ensure the circuit layout accommodates the PowerSO-10RF package and provides adequate thermal management. Verify that the biasing network supports the specified 15 V supply and 220 mA quiescent current. Consider the 20:1 VSWR tolerance when designing matching networks for potentially mismatched loads.

Part Context

The PD85025-E is part of STMicroelectronics' LDMOS family, optimized for high-gain broadband commercial and industrial applications. It is commonly evaluated using demonstration boards like the STEVAL-TDR022V1. This transistor is designed for use in plastic packages that offer high reliability and ease of assembly for RF needs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

PD85025-EPD85025-E
$15.44
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