SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PD85025-E is an N-channel LDMOS RF power transistor manufactured by STMicroelectronics. It operates within a frequency range of 340 to 520 MHz and utilizes a PowerSO-10RF package. The device supports a supply voltage of 15 V, delivering an output power of 10 WPEP with a minimum gain of 16.5 dB. Key electrical specifications include a drain current of 1.25 A at full power, third-order intermodulation distortion (IMD3) below -27 dBc, and a load mismatch tolerance of 20:1 VSWR.
Verify the specific revision status and availability directly with STMicroelectronics or authorized distributors before initiating procurement. Confirm that the component meets all necessary regulatory requirements for the intended deployment region. Ensure proper handling procedures are followed due to moisture sensitivity classification. Review the datasheet for any recent product change notifications that may affect performance or physical dimensions.
Select this component for designs requiring stable RF amplification in the 340 to 520 MHz band. Ensure the circuit layout accommodates the PowerSO-10RF package and provides adequate thermal management. Verify that the biasing network supports the specified 15 V supply and 220 mA quiescent current. Consider the 20:1 VSWR tolerance when designing matching networks for potentially mismatched loads.
The PD85025-E is part of STMicroelectronics' LDMOS family, optimized for high-gain broadband commercial and industrial applications. It is commonly evaluated using demonstration boards like the STEVAL-TDR022V1. This transistor is designed for use in plastic packages that offer high reliability and ease of assembly for RF needs.
Publicly confirmed substitute part numbers are not available in the provided documentation.