PD85025TR-E

Overview

The PD85025TR-E is an N-channel RF power LDMOS transistor manufactured by STMicroelectronics. It operates within a frequency range of 340 to 520 MHz and utilizes a PowerSO-10RF package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 7 A, and a maximum gate-source voltage (Vgs) of +15 V. The device supports a power dissipation (Pd) of 79 W and functions across a temperature range from -65 °C to +150 °C.

Feature Summary

• Designed for UHF OFDM and two-way mobile radio applications
• Provides excellent thermal stability under operating conditions
• Capable of handling significant load mismatch up to 20:1

Applications

• UHF OFDM systems
• Two-way mobile radios

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or cut tape configuration. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the component meets environmental requirements for the intended deployment environment.

Selection Notes

Select this component for designs requiring operation in the 340 to 520 MHz band with high thermal stability. Verify that the system supply voltage aligns with the 15 V requirement and that the PCB layout accommodates the PowerSO-10RF package dimensions. Ensure biasing circuits support the specified quiescent current for optimal performance.

Part Context

This part belongs to the PD85025-E series of RF power transistors. It is specifically engineered for use in demonstration boards like the STEVAL-TDR022V1, which serves as a reference design for evaluating LDMOS performance in UHF communication equipment.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.