PD85035-E

Overview

The PD85035-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from STMicroelectronics' LdmoST plastic family. Designed for high gain and broadband commercial and industrial applications, it operates at 13.6 V in common source mode up to 1 GHz. The device delivers 35 W output power with 14.9 dB gain at 870 MHz. It features excellent thermal stability, ESD protection, and compliance with the 2002/95/EC European directive. Operating temperatures range from -65 °C to +165 °C.

Feature Summary

• Common source configuration utilizing N-channel enhancement-mode lateral field-effect technology
• Plastic PowerSO-10RF package optimized for RF performance and ease of assembly
• Superior linearity performance suitable for demanding signal integrity requirements

Applications

• Car mobile radio systems
• Broadband commercial RF applications
• Industrial RF equipment

Procurement Notes

Verify component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm RoHS compliance status and moisture sensitivity level prior to surface mount assembly. Ensure proper handling procedures are followed due to ESD sensitivity. Cross-reference ordering suffixes to confirm exact package variant and tape/reel or tube packaging options available from authorized distributors.

Selection Notes

Select this component for designs requiring high linearity and gain in the sub-GHz frequency range. The PowerSO-10RF package offers a balance between thermal performance and PCB space efficiency compared to ceramic packages. Consider the 13.6 V operating voltage when designing bias circuits. Evaluate thermal management solutions to maintain junction temperature within the specified maximum operating limit during continuous wave operation.

Part Context

This device belongs to STMicroelectronics' LdmoST plastic family of RF power transistors. It represents the integration of advanced LDMOS technology into a JEDEC-approved SMD plastic package. This family targets applications where reliability and assembly ease are critical, distinguishing it from traditional chip-on-board or ceramic-based RF power solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult STMicroelectronics directly for qualified alternatives or verify compatibility with specific pin-to-pin replacements through official engineering change notices.