PD85035S-E

PD85035S-E

$18.60
  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-

SKU:6dce148ad4f2 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:LDMOS
  • Frequency:870MHz
  • Gain:17dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):8A
  • Noise Figure:-
  • Current - Test:350 mA
  • Power - Output:15W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package:PowerSO-10RF (Straight Lead)
  • Configuration:-

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PD85035S-E

Overview

The PD85035S-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from STMicroelectronics' LdmoST plastic family. Designed for high gain and broadband commercial and industrial applications, it operates in common source mode at frequencies up to 1 GHz with a supply voltage of 13.6 V. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 8 A, and a maximum operating frequency of 870 MHz. At 870 MHz and 13.6 V, the device delivers an output power (Pout) of 35 W with a gain of 14.9 dB. It features excellent thermal stability, ESD protection, and compliance with RoHS directives.

Feature Summary

  • Common source configuration utilizing N-channel enhancement-mode lateral MOSFET technology
  • High reliability PowerSO-10RF SMD plastic package optimized for RF performance and ease of assembly
  • Superior linearity performance suitable for demanding mobile radio applications
  • Excellent thermal stability and built-in electrostatic discharge (ESD) protection

Applications

  • Car mobile radio systems requiring high linearity
  • Broadband commercial RF power amplification
  • Industrial RF applications operating up to 1 GHz

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm the package type is PowerSO-10RF and ensure the part meets RoHS compliance requirements. Cross-reference the specific suffix 'S' with STMicroelectronics documentation to confirm any packaging or tape-and-reel variations compared to standard tube configurations.

Selection Notes

Select this component for designs requiring a plastic-packaged RF power transistor with high gain and linearity. Ensure the application supports a 13.6 V supply and operates within the 870 MHz frequency range for optimal 35 W output performance. Verify that the PCB layout accommodates the PowerSO-10RF package dimensions and thermal requirements for effective heat dissipation.

Part Context

The PD85035S-E belongs to STMicroelectronics' LdmoST plastic family, representing a shift towards surface-mountable RF power solutions. It utilizes advanced LDMOS technology housed in the first JEDEC-approved high-power SMD plastic package. This series addresses the need for reliable, easy-to-assemble RF components in commercial and industrial sectors, replacing traditional ceramic packages in many broadband applications.

Replacement Considerations

The PD85035-E is the base model variant without the 'S' suffix, typically indicating differences in packaging or reel configuration rather than electrical function. Verify if the 'S' suffix denotes a specific tape-and-reel option. No other direct functional substitutes are confirmed in the provided documentation.

PD85035S-EPD85035S-E
$18.60
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