PD85035STR-E

Overview

The PD85035STR-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from STMicroelectronics, designed for high gain and broadband commercial applications. It operates at 13.6 V in common source mode up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, continuous drain current (Id) of 8 A, and gate-source voltage (Vgs) of +15 V. The device delivers 35 W output power with 14.9 dB gain at 870 MHz. It features a PowerSO-10RF-Straight-4 package, supports SMD/SMT mounting, and operates between -65°C and +150°C.

Feature Summary

• Common source configuration utilizing LdmoST plastic technology for enhanced thermal stability.
• Integrated ESD protection compliant with European directives.
• Optimized for high reliability in the first true SMD plastic RF power package.

Applications

• Car mobile radio systems requiring superior linearity.
• Broadband commercial and industrial RF applications.
• Hybrid RF power modules for mobile radios operating in the 380-490 MHz band.

Procurement Notes

Verify component authenticity through official STMicroelectronics channels or authorized distributors. Confirm RoHS compliance status via the manufacturer's documentation. Ensure storage conditions account for moisture sensitivity level requirements prior to soldering. Validate that the specific ordering suffix matches the required package variant for your design integration.

Selection Notes

Select this component for designs requiring N-channel lateral MOSFET performance in a surface-mount plastic package. Consider the 40 V Vds rating and 35 W power capability against your specific frequency and load requirements. Evaluate the PowerSO-10RF package dimensions for PCB layout compatibility. Ensure thermal management strategies align with the 95 W power dissipation specification under intended operating conditions.

Part Context

This part belongs to the PD85035-E series within STMicroelectronics' LdmoST plastic family. It represents an evolution in RF power transistors by combining high-performance lateral DMOS technology with a JEDEC-approved SMD plastic package. This series targets applications needing robust reliability and ease of assembly compared to traditional chip-on-board solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical specifications carefully if considering alternative manufacturers. Consult STMicroelectronics application notes for recommended replacement strategies or direct equivalents within the same product family.