PD85035TR-E

Overview

The PD85035TR-E is an N-channel enhancement-mode lateral RF power transistor from the LdmoST plastic family, manufactured by STMicroelectronics. It operates at frequencies up to 1 GHz with a drain-source breakdown voltage of 40 V and continuous drain current of 8 A. The device delivers 35 W output power with 14.9 dB gain at 870 MHz under 13.6 V bias. It features a maximum power dissipation of 95 W and a maximum operating temperature of +150°C. Packaged in PowerSO-10RF-Formed-4 for surface mount applications, it offers excellent thermal stability and linearity.

Feature Summary

• Common source configuration designed for high gain and broadband commercial and industrial applications
• Utilizes LDMOS technology for superior linearity, reliability, and thermal stability
• ESD protection integrated within the JEDEC-approved PowerSO-10RF plastic package

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF signal processing

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm RoHS compliance status via official datasheets. Check lifecycle status as the part may be discontinued. Ensure storage conditions respect humidity sensitivity requirements before assembly.

Selection Notes

Select this component for designs requiring high linearity and gain in the sub-GHz range. Verify compatibility with 13.6 V common source operation. Ensure PCB layout supports the PowerSO-10RF package thermal dissipation needs. Compare against similar LdmoST devices if different power levels are required.

Part Context

This part belongs to the PD85035-E series of N-channel lateral MOSFETs. It shares the PowerSO-10RF package form factor with other members like the PD55015-E but differs in power handling capabilities. The series targets RF power applications where plastic packaging reliability is critical.

Replacement Considerations

Direct substitutes include other parts from the PD85035-E series. Verify pinout and thermal characteristics when cross-referencing with generic RF MOSFETs. No specific alternate part numbers are publicly confirmed as direct replacements.