PH3134-55L

Description：RF TRANS NPN 65V
Series：-

SKU:f0eb8a4fa7a9 Category: Bipolar RF Transistors Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 65V
Series：-
Mfr：MACOM Technology Solutions
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：65V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：7.5dB
Power - Max：55W
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：6.5A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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PH3134-55L

Overview

The PH3134-55L is an NPN silicon microwave power transistor designed for radar pulsed power applications. It operates within the 3.1 to 3.4 GHz frequency range with a 55W output power capability under 300µs pulse and 10% duty cycle conditions. Key electrical specifications include a collector-emitter breakdown voltage of 65V, a minimum power gain of 7.5 dB, and a collector efficiency of at least 35%. The device features internal input and output impedance matching and utilizes a hermetic metal/ceramic package.

Feature Summary

Common base configuration with broadband Class C operation
High efficiency inter-digitized geometry with diffused emitter ballasting resistors
Internal input and output impedance matching
Hermetic metal/ceramic package construction

Applications

Radar pulsed power systems
Microwave power amplification
Broadband RF signal generation

Procurement Notes

Verify component authenticity through authorized MACOM Technology Solutions channels or certified distributors. Confirm RoHS compliance status and check for any engineering change notices (ECNs) that may affect mechanical outlines or electrical parameters. Ensure storage temperature limits are respected during handling.

Selection Notes

Select this component when high peak power output is required in the S-band radar spectrum. Evaluate thermal resistance requirements against system cooling capabilities, as junction temperature ratings reach 200°C. Consider the 2:1 load mismatch tolerance for robust performance in varying antenna impedance environments.

Part Context

This part belongs to the M/A-COM radar pulsed power transistor family, which includes variants like the PH3134-10M and PH3134-75S. These devices share common design architectures optimized for high-efficiency microwave power conversion in defense and aerospace radar platforms.

Replacement Considerations

Direct substitutes within the same series include PH3134-20L and PH3134-75S. Verify pinout compatibility and thermal interface dimensions before substitution. Cross-reference electrical parameters such as breakdown voltage and gain to ensure circuit stability.