ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.3A 8SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.3A (Ta)
- Rds On (Max) @ Id, Vgs：30mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：14.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：560pF @ 20V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The PHN203,518 is a dual N-channel logic level MOSFET array manufactured by Nexperia. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.3A at ambient temperature. The device is designed for surface mount applications in an 8-SO package, specifically the SOT96-1 configuration. With a power dissipation rating of 2W at Ta, this component utilizes TrenchMOS technology to achieve high efficiency through low switching and conduction losses.
Feature Summary
- Dual N-channel configuration within a single compact package
- Logic level gate drive capability for direct interface with standard logic signals
- Optimized for high frequency operation with reduced switching losses
Applications
- Class-D audio amplifiers
- DC-to-DC converter circuits
- Motor control systems
- Server power supply designs
Procurement Notes
Verify part status carefully as the PHN203,518 is listed as obsolete or scheduled for obsolescence by the manufacturer. Confirm availability through authorized distributors and check for end-of-life notifications. Ensure that any procurement actions account for potential discontinuation risks and plan for long-term supply chain stability accordingly.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required for low-voltage, high-frequency applications. The 30V rating and 6.3A current capacity suit specific power management needs. Consider the 8-SO package constraints for PCB layout. Verify compatibility with logic level drive requirements and thermal management capabilities for the intended operating environment.
Part Context
This component belongs to Nexperia's MOSFET array family, utilizing TrenchMOS technology for enhanced performance. It is categorized under FET, MOSFET Arrays and is designed for industrial and communications applications. The product aligns with Nexperia's focus on high-efficiency semiconductor solutions for modern electronic systems requiring compact form factors.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, alternative components must be identified based on matching electrical parameters such as Vdss, Id, and package type. Consult official Nexperia resources or distributor catalogs for qualified replacements.
