PHN210T,118

PHN210T,118

  • Description:MOSFET 2N-CH 30V 8SO
  • Series:TrenchMOS™

SKU:3bf715af3e75 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8SO
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:100mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id:2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:250pF @ 20V
  • Power - Max:2W
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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PHN210T,118

Overview

The PHN210T is a dual intermediate level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an SO8 plastic package. It features a drain-source voltage of 30 V and a continuous drain current of 3.4 A at 25 °C. The on-state resistance ranges from 80 mΩ to 200 mΩ depending on gate drive conditions. Total power dissipation is rated at 2 W, with a junction temperature range of -65 °C to 150 °C.

Feature Summary

  • Suitable for high frequency applications due to fast switching characteristics
  • Compatible with logic level gate drive sources
  • Operates effectively with low gate drive sources

Applications

  • DC-to-DC converters
  • Logic level translators
  • Motor and relay drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging configuration. Confirm that the application environment remains within the specified non-automotive scope, as this component lacks automotive qualification. Cross-reference thermal management requirements with the provided transient thermal impedance data before finalizing the design.

Selection Notes

Select this component for designs requiring dual N-channel switching in a compact surface-mount footprint. Ensure the gate drive circuitry aligns with the intermediate level threshold specifications. Evaluate the thermal resistance parameters against the expected ambient temperature and duty cycle to maintain junction temperatures within safe operating limits during continuous operation.

Part Context

This device belongs to Nexperia's TrenchMOS portfolio, designed for computing, communications, consumer, and industrial sectors. It integrates two independent N-channel FETs into a single SO8 package to save board space. The technology focuses on balancing conduction losses with switching speed for general-purpose power control tasks.

Replacement Considerations

Consult official substitution guides for equivalent dual N-channel MOSFETs in SOT96-1 packages. Verify pin compatibility and electrical parameter overlaps before swapping components in existing layouts.

FAQ

Is the PHN210T qualified for automotive applications?

No, the product data sheet explicitly states it is designed for computing, communications, consumer, and industrial applications only.

What is the maximum repetitive peak drain-source voltage?

The maximum repetitive peak drain-source voltage is 30 V.

How many leads does the SO8 package contain?

The SO8 plastic small outline package contains 8 leads.

PHN210T,118PHN210T,118

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