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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6.1A 8SOP
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.1A (Ta), 6A (Ta)
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA, 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.8nC @ 10V, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：343pF @ 15V, 870pF @ 15V
- Power - Max：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The PJL9602_R2_00001 is a single N-channel enhancement mode MOSFET manufactured by Panjit International Inc. utilizing silicon technology. It is housed in an SOT-323-3 surface-mount package designed for compact circuit layouts. The device features a drain-source breakdown voltage (Vds) of 60 V and supports a continuous drain current (Id) of 250 mA. Key electrical parameters include a maximum on-resistance (Rds(on)) of 7.5 Ohms, a gate-source voltage rating of ±20 V, and a threshold voltage (Vgs(th)) of 3 V. Additional specifications encompass a gate charge (Qg) of 1.3 nC, power dissipation (Pd) of 350 mW, and an operating temperature range from -55 °C to +150 °C.
Feature Summary
- N-channel enhancement mode operation for standard switching applications
- SOT-323-3 surface-mount packaging for space-constrained designs
- Silicon-based construction for reliable performance
Applications
- General purpose switching circuits
- Low voltage power management modules
- Battery protection systems
Procurement Notes
Verify the specific datasheet version and RoHS compliance status directly with Panjit International Inc. or authorized distributors before procurement. Confirm that the SOT-323-3 package dimensions match your PCB footprint requirements. Ensure that the 60 V rating and 250 mA current capacity are sufficient for your target application's peak and steady-state conditions. Check for any recent product change notifications (PCNs) that might affect pinout or material composition.
Selection Notes
Select this component when a small-footprint N-channel MOSFET with moderate voltage handling is required. The 7.5 Ohm on-resistance suggests suitability for low-current applications rather than high-power loads. Compare the 350 mW power dissipation limit against your thermal design constraints. Consider the 60 V breakdown voltage as the upper limit for drain-source potential in your circuit design.
Part Context
This part belongs to Panjit's discrete semiconductor portfolio, specifically within the MOSFET category. It is classified under transistors and utilizes standard silicon process technology. The manufacturer identifies it as a single-channel device intended for general electronic applications requiring compact surface-mount solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components by matching the SOT-323-3 package, 60 V Vds rating, N-channel configuration, and similar Rds(on) characteristics.
