PJL9802_R2_00001

PJL9802_R2_00001

$0.13
  • Description:MOSFET 2N-CH 30V 5A 8SOP
  • Series:-

SKU:bfe34daecfb3 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 5A 8SOP
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Rds On (Max) @ Id, Vgs:48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:235pF @ 15V
  • Power - Max:1.7W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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PJL9802_R2_00001

Overview

The PJL9802_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5 A at 25°C, packaged in an SOP-8 configuration. The device exhibits a low on-state resistance of 48 mΩ max at VGS=10V and ID=5A, or 70 mΩ max at VGS=4.5V and ID=3A. Key electrical parameters include a gate threshold voltage of 1.0 to 2.1 V, total gate charge of 5.8 nC, and input capacitance of 235 pF. Thermal characteristics specify a power dissipation of 1.7 W at 25°C and a junction-to-ambient thermal resistance of 73.5 °C/W.

Feature Summary

  • Dual N-channel architecture providing two independent switching channels within a single package
  • Optimized for high switching speed with low gate charge and low reverse transfer capacitance
  • Enhanced dv/dt capability for improved performance in fast-switching applications
  • Compliant with EU RoHS 2.0 standards and utilizes green molding compound per IEC 61249

Applications

  • General-purpose low-voltage power switching circuits
  • DC-DC converter output stages
  • Load switching and isolation applications

Procurement Notes

Verify the specific ordering suffix _R2_00001 corresponds to the 2.5K pcs / 13” reel packing code and L9802 marking version. Confirm halogen-free status and compliance with EU RoHS 2.0 requirements during component qualification. Ensure the supplier provides the official datasheet REV.00 dated November 18, 2016 for accurate parameter validation.

Selection Notes

Select this component for applications requiring dual N-channel switching with a 30 V rating and up to 5 A continuous current. Consider the 73.5 °C/W thermal resistance and 1.7 W power dissipation limits for heat management. Verify that the 48 mΩ RDS(on) at 10 V drive meets efficiency targets, or utilize the 70 mΩ specification if operating with a 4.5 V gate drive level.

Part Context

This part belongs to Panjit's dual MOSFET portfolio, specifically designed as a complementary alternative to P-channel variants like the PJL9809. While the PJL9809 offers similar 30 V ratings in an SOP-8 package, the PJL9802 utilizes N-channel technology, which typically provides lower on-resistance and faster switching speeds compared to equivalent P-channel devices in the same series.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

PJL9802_R2_00001PJL9802_R2_00001
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