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The PJL9802_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5 A at 25°C, packaged in an SOP-8 configuration. The device exhibits a low on-state resistance of 48 mΩ max at VGS=10V and ID=5A, or 70 mΩ max at VGS=4.5V and ID=3A. Key electrical parameters include a gate threshold voltage of 1.0 to 2.1 V, total gate charge of 5.8 nC, and input capacitance of 235 pF. Thermal characteristics specify a power dissipation of 1.7 W at 25°C and a junction-to-ambient thermal resistance of 73.5 °C/W.
Verify the specific ordering suffix _R2_00001 corresponds to the 2.5K pcs / 13” reel packing code and L9802 marking version. Confirm halogen-free status and compliance with EU RoHS 2.0 requirements during component qualification. Ensure the supplier provides the official datasheet REV.00 dated November 18, 2016 for accurate parameter validation.
Select this component for applications requiring dual N-channel switching with a 30 V rating and up to 5 A continuous current. Consider the 73.5 °C/W thermal resistance and 1.7 W power dissipation limits for heat management. Verify that the 48 mΩ RDS(on) at 10 V drive meets efficiency targets, or utilize the 70 mΩ specification if operating with a 4.5 V gate drive level.
This part belongs to Panjit's dual MOSFET portfolio, specifically designed as a complementary alternative to P-channel variants like the PJL9809. While the PJL9809 offers similar 30 V ratings in an SOP-8 package, the PJL9802 utilizes N-channel technology, which typically provides lower on-resistance and faster switching speeds compared to equivalent P-channel devices in the same series.
Publicly confirmed substitute part numbers are not available in the provided documentation.