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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A 8SOP
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：343pF @ 15V
- Power - Max：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The PJL9804_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a 30V drain-source voltage rating and supports a continuous drain current of 6A. The device exhibits a maximum on-resistance of 28mΩ at standard gate drive conditions. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation capacity of up to 1.25W. The component is housed in an SOP-8 surface-mount package.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs into a single compact package for space-constrained designs.
- Low on-resistance characteristics optimized for efficient power switching and reduced conduction losses.
- Enhancement mode operation ensuring reliable turn-on behavior with standard logic-level gate drive voltages.
Applications
- DC-DC converter circuits requiring dual synchronous rectification or half-bridge topologies.
- Motor driver interfaces for controlling low-voltage DC motors in embedded systems.
- Load switching applications in portable electronics and battery-powered devices.
Procurement Notes
Verify the Not Recommended for New Design (NRND) status before initiating any new product development projects. Confirm current manufacturing availability and lead times directly with authorized distributors or the manufacturer, as production schedules may be subject to change or discontinuation without prior notice.
Selection Notes
Evaluate the 28mΩ on-resistance against thermal management requirements for the specific application load. Ensure the SOP-8 package footprint aligns with existing PCB layout constraints. Consider the 6A current rating relative to peak operational demands and ambient temperature derating curves provided in the official datasheet.
Part Context
This component belongs to Panjit's portfolio of silicon N-channel MOSFETs designed for general-purpose switching applications. The dual configuration allows for simplified circuit design in bridge and multiphase converter architectures compared to using discrete single-channel devices.
Replacement Considerations
No publicly confirmed substitute part numbers are available in the provided documentation. Engineers should consult official cross-reference lists from Panjit or equivalent manufacturers when sourcing alternatives due to the NRND status.
FAQ
What is the maximum drain-source voltage rating for this device?
The PJL9804_R2_00001 has a maximum drain-source voltage (Vds) rating of 30V.
Does this component contain integrated ESD protection?
The provided specifications do not indicate that the PJL9804_R2_00001 includes built-in electrostatic discharge (ESD) protection structures.
What is the recommended operating junction temperature range?
The device is rated for operation within a junction temperature range of -55°C to +150°C.
