PJQ4606_R1_00001

$0.26

Description：MOSFET N/P-CH 30V 7.6A 8DFN
Series：-

SKU:0a8cc0636674 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 7.6A 8DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.8nC @ 4.5V, 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：429pF @ 25V, 846pF @ 15V
Power - Max：2W (Ta), 18W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：DFN3030B-8
Grade：-
Qualification：-

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PJQ4606_R1_00001

Overview

The PJQ4606_R1_00001 is a complementary enhancement mode MOSFET manufactured by Panjit International Inc. It integrates an N-channel and P-channel device within a single DFN3030B-8L package. The N-channel component supports a drain-source voltage of 30 V, with typical on-resistance values of 16 mΩ at 10 V gate drive and 22 mΩ at 4.5 V. Its total gate charge is typically 4.8 nC. The P-channel counterpart features a -30 V breakdown voltage, with typical on-resistance of 25 mΩ at -10 V and 36 mΩ at -4.5 V, alongside a 7.8 nC gate charge. Both channels operate across a junction temperature range of -55°C to 150°C.

Feature Summary

Complementary configuration integrating N-channel and P-channel transistors in a single low-profile package
Optimized for high switching speed with low gate charge and reduced reverse transfer capacitance
Enhanced dv/dt capability suitable for demanding power switching applications

Applications

Synchronous rectification circuits
Low-side and high-side power switching
DC-DC converter topologies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the DFN3030B-8L footprint matches the target PCB layout requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values during operation.

Selection Notes

Select this component when space constraints require a dual-transistor solution in a compact surface-mount form factor. Evaluate the 16 mΩ and 25 mΩ on-resistance specifications against the required load currents to ensure acceptable conduction losses. Verify compatibility with the 4.5 V logic-level gate drive signals if operating at lower control voltages.

Part Context

This part belongs to Panjit's portfolio of complementary MOSFETs designed for efficient power management. The DFN3030B-8L package provides a balance between thermal performance and board space efficiency. The device is constructed using silicon technology compliant with EU RoHS 2.0 standards.

Replacement Considerations

Direct pin-compatible replacements are not explicitly documented in the provided datasheet. Engineers must verify electrical parameters such as RDS(on), VGS(th), and package dimensions before substituting with other complementary MOSFETs from different manufacturers.