PJS6833_S2_00001

$0.42

Description：MOSFET 2P-CH 30V 1.1A SOT23-6
Series：-

SKU:05ad655c2cb0 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 1.1A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
Rds On (Max) @ Id, Vgs：370mOhm @ 1.1A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：125pF @ 15V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

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PJS6833_S2_00001

Overview

The PJS6833_S2_00001 is a surface-mount P-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a maximum drain-source voltage of 30V and an average continuous drain current of 1.1A at ambient temperature, with a power dissipation rating of 1.25W under the same conditions. The device utilizes an SOT-23-6 package configuration. It is designed for general-purpose switching applications requiring low-voltage P-channel control.

Feature Summary

P-channel enhancement mode architecture
ESD protection capabilities integrated within the structure
Surface-mount construction in a compact SOT-23-6 package

Applications

Low-voltage DC-DC converter topologies
Battery protection circuits
Load switch implementations

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to ensure correct binning and electrical tolerances. Confirm that the SOT-23-6 footprint matches the target PCB layout requirements. Cross-reference the datasheet revision date to validate thermal characteristics and absolute maximum ratings prior to final design integration.

Selection Notes

Select this component when a 30V P-channel solution is required in a small outline transistor package. Evaluate the 1.1A current limit against peak load demands. Ensure the 1.25W thermal dissipation capability aligns with the system's ambient operating environment and heatsinking constraints without exceeding junction temperature limits.

Part Context

This part belongs to Panjit's discrete semiconductor portfolio, specifically within the MOSFET category. It serves as a fundamental switching element for low-power electronic designs. The product line targets cost-sensitive consumer electronics and industrial control modules where space efficiency and reliable P-channel switching are prioritized over high-power handling.