PJT7002H_R1_00001

$0.18

Description：MOSFET 2N-CH 60V 0.25A SOT363
Series：-

SKU:2ebeb54e070f Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.25A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Rds On (Max) @ Id, Vgs：5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：22pF @ 25V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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PJT7002H_R1_00001

Overview

The PJT7002H_R1_00001 is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It features a maximum continuous drain current of 250 mA and a pulsed drain current of 1000 mA. The device exhibits a maximum on-state resistance of 5 Ω at VGS=10V and ID=300mA, or 7.5 Ω at VGS=5V and ID=50mA. Key electrical parameters include a gate threshold voltage of 2.49V typical, total gate charge of 1.3 nC, and power dissipation of 350 mW at 25°C ambient temperature. Operating junction and storage temperatures range from -55°C to +150°C.

Feature Summary

Advanced Trench Process Technology for optimized performance
ESD Protected design for enhanced reliability
Lead-free construction compliant with EU RoHS 2011/65/EU directive
Green molding compound that is halogen-free per IEC61249 Std.

Applications

Relay driver circuits
Speed line drive applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm compliance requirements such as RoHS status and halogen-free specifications directly with the manufacturer's datasheet before procurement. Ensure the component meets environmental operating limits for the intended application.

Selection Notes

Select this component for low-voltage switching applications requiring high-speed operation within a compact SOT-363 footprint. Evaluate thermal resistance characteristics and derating curves above 25°C to ensure adequate heat dissipation. Verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.

Part Context

This part belongs to the PJT7002H series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series utilizes advanced trench process technology to achieve low on-resistance and fast switching speeds. The product is designed for general-purpose switching applications where small form factor and ESD protection are critical requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer for potential alternatives if sourcing constraints exist.