PJT7603_R1_00001

$0.36

Description：MOSFET N/P-CH 50V 0.4A SOT363
Series：-

SKU:50368528e758 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 50V 0.4A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta), 250mA (Ta)
Rds On (Max) @ Id, Vgs：1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.95nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：36pF @ 25V, 51pF @ 25V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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PJT7603_R1_00001

Overview

The PJT7603_R1_00001 is a complementary enhancement mode MOSFET in an SOT-363 package. It integrates one N-channel and one P-channel device. The N-channel drain-source voltage is 50V with a continuous current of 400mA. The P-channel drain-source voltage is -60V with a continuous current of -250mA. Both channels feature ESD protection rated at 2kV HBM. Power dissipation is 350mW at 25°C ambient temperature.

Feature Summary

Advanced trench process technology for optimized performance
Integrated electrostatic discharge protection rated at 2kV human body model
Halogen-free green molding compound compliant with IEC61249 standards

Applications

Switch load circuits
Pulse width modulation applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity, as the R1 designation indicates a 3000-piece reel. Confirm RoHS compliance status through official documentation before integration. Ensure thermal management aligns with the specified derating curve above 25°C ambient temperature.

Selection Notes

Select this component for low-voltage switching tasks requiring complementary channel configurations in compact surface-mount layouts. Evaluate the on-state resistance values against required conduction losses. Verify that the gate threshold voltage range matches the driving logic levels available in the target circuit design.

Part Context

This part belongs to the Panjit complementary MOSFET series designed for general-purpose switching. It utilizes silicon technology within a standard SOT-363 footprint. The device serves as a discrete solution for replacing dual-transistor arrays in space-constrained printed circuit board designs.

Replacement Considerations

Direct replacements must match the SOT-363 package and complementary N/P-channel configuration. Verify that substitute components meet or exceed the 50V/60V voltage ratings and provide equivalent gate charge characteristics for similar switching speeds.