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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1A SOT363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Rds On (Max) @ Id, Vgs：150mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：92pF @ 10V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The PJT7800_R1_00001 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It features ESD protection rated at 2KV HBM and utilizes advanced trench process technology. Key electrical parameters include a maximum drain-source voltage of 20V, continuous drain current of 1A, and pulsed drain current of 4A. The on-state resistance (RDS(on)) is specified as less than 150mΩ at VGS=4.5V/ID=1A, 215mΩ at VGS=2.5V/ID=0.7A, and 400mΩ at VGS=1.8V/ID=0.3A. The device operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- ESD Protected with 2KV Human Body Model rating
- Lead-free construction compliant with EU RoHS directive
- Green molding compound that is halogen-free per IEC61249 standard
Applications
- Switch load applications
- PWM application circuits
Procurement Notes
Verify the component against the official Panjit datasheet PJT7800-REV.04S to confirm technical specifications and compliance standards. Ensure the marking code matches 'T00' for the SOT-363 package. Confirm environmental compliance details such as lead-free status and halogen-free molding compound requirements during the sourcing process.
Selection Notes
Select this component for low-voltage switching applications requiring high efficiency and robust ESD protection. Consider the thermal resistance of 357°C/W and power dissipation limits when designing heat management strategies. Evaluate gate charge characteristics for high-frequency PWM operations to ensure compatibility with drive circuitry constraints.
Part Context
This part belongs to the PJT7800 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series focuses on small-signal switching capabilities within a compact SOT-363 footprint. These components are engineered for general-purpose electronic circuits where space constraints and electrostatic discharge resilience are critical design factors.
Replacement Considerations
Consult the manufacturer's documentation for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before integrating alternative components into existing designs.
