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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.5A SOT363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：38pF @ 10V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The PJT7807_R1_00001 is a 20V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It features a maximum continuous drain current of -500mA and a pulsed drain current of -1000mA. The device exhibits low on-state resistance, with RDS(on) values ranging from 0.85Ω to 6.0Ω depending on gate-source voltage and drain current conditions. Key electrical parameters include a drain-source breakdown voltage of -20V, a gate-source voltage limit of +10V, and a power dissipation of 350mW at 25°C ambient temperature. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced Trench Process Technology for enhanced performance
- Low Voltage Drive capability optimized for 1.2V operation
- Integrated ESD protection mechanisms
- Halogen-free green molding compound compliant with IEC61249 standards
Applications
- Load switch circuits
- PWM (Pulse Width Modulation) applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The _R1 suffix indicates a 3K pcs / 7” reel packing configuration, while the _R2 suffix corresponds to a 10K pcs / 13” reel. Confirm that the required packaging quantity aligns with production needs before finalizing procurement orders to ensure compatibility with automated assembly equipment.
Selection Notes
Select this component for low-voltage switching applications requiring compact surface-mount integration. Ensure the driving circuit can provide sufficient negative gate-source voltage to achieve the desired on-state resistance levels. Consider the thermal derating characteristics above 25°C when designing heat dissipation strategies for enclosed environments or high-duty cycle operations.
Part Context
This part belongs to the PPJT7807 series of P-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The manufacturer specializes in semiconductor solutions including MOSFETs, diodes, and transistors for various industrial and consumer electronics markets. The PJT7807 variant specifically targets low-power switching requirements within the broader portfolio of trench technology devices.
Replacement Considerations
Direct replacements must match the 20V P-Channel specification and SOT-363 footprint. Verify pinout compatibility and ensure equivalent or superior RDS(on) and VGS(th) parameters. Cross-reference datasheets for thermal resistance and capacitance values to maintain circuit stability during switching transitions.
