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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.5A SOT363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：67pF @ 10V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The PJT7808 is a 20V N-Channel Enhancement Mode MOSFET in an SOT-363 package. It supports a continuous drain current of 500mA and a pulsed drain current of 1000mA. The device features low voltage drive capability at 1.2V, with a gate threshold voltage ranging from 0.3V to 0.9V. On-state resistance varies based on gate voltage, reaching up to 3000mΩ at VGS=1.2V and ID=20mA. Total gate charge is typically 1.4nC at VGS=4.5V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Advanced Trench Process Technology for enhanced performance
- Specially designed for switch load and PWM applications
- Integrated ESD protection mechanisms
Applications
- Switch load control circuits
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific ordering suffix R1_00001 against official Panjit documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure compliance with RoHS 2011/65/EU directives and halogen-free requirements when sourcing components for manufacturing. Confirm that the lot number tracking aligns with manufacturer standards for quality assurance purposes.
Selection Notes
Select this component for low-voltage drive scenarios requiring compact SOT-363 packaging. Evaluate thermal resistance constraints carefully due to the small form factor. Consider the high on-resistance at very low gate voltages when designing for minimal power consumption versus switching speed trade-offs in portable electronics.
Part Context
This part belongs to the Panjit International Inc. lineup of N-Channel Enhancement Mode MOSFETs. It utilizes advanced trench process technology to achieve efficient switching capabilities within a miniature surface-mount footprint suitable for space-constrained electronic designs.
Replacement Considerations
Consult official Panjit substitution guides for verified equivalents. Verify pinout compatibility and electrical parameter overlaps before integrating alternative components into existing circuit layouts.
