PJT7808_R2_00001

PJT7808_R2_00001

  • Description:MOSFET 2N-CH 20V 0.5A SOT363
  • Series:-

SKU:8b5ae77a9d0b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.5A SOT363
  • Series:-
  • Mfr:EMO Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
  • Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:67pF @ 10V
  • Power - Max:350mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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PJT7808_R2_00001

Overview

The PJT7808 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 500mA. The device supports low voltage drive with a gate threshold voltage typically at 0.65V. On-state resistance (RDS(on)) varies from 280mΩ to 3000mΩ depending on gate voltage and current conditions. Power dissipation is rated at 350mW at 25°C ambient temperature, derating by 2.8mW/°C above this point. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

  • Advanced Trench Process Technology for enhanced performance
  • Specially designed for switch load and PWM applications
  • ESD protected structure
  • Compliant with EU RoHS 2011/65/EU directive and IEC61249 Std. Halogen Free

Applications

  • Switch load control
  • PWM application circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and reel size. Confirm that the component marking matches 'T08' as specified in the datasheet. Ensure compliance with environmental directives such as EU RoHS 2011/65/EU if required for the target assembly. Check for any recent Product Change Notifications (PCN) regarding material or process updates.

Selection Notes

Select this component for low-voltage switching applications requiring a 20V rating and up to 500mA continuous current. Consider the RDS(on) values at specific VGS levels to ensure adequate efficiency for the intended drive voltage. Verify thermal management requirements given the 350mW power dissipation limit in the SOT-363 package. Ensure the application does not involve life-saving or high-reliability equipment as per the manufacturer's disclaimer.

Part Context

The PJT7808 is part of Panjit International Inc.'s lineup of small-signal MOSFETs. It utilizes an SOT-363 surface-mount package, suitable for space-constrained designs. The device is marked with 'T08'. It is designed for general-purpose switching tasks where low gate drive voltage compatibility is beneficial. The product is subject to standard manufacturing variations and should be used within the specified absolute maximum ratings.

Replacement Considerations

No official substitute part numbers are listed in the provided datasheet. When selecting a replacement, ensure the new component matches the 20V VDS, 500mA ID, and SOT-363 package dimensions. Verify that the replacement's RDS(on) characteristics and gate charge parameters are compatible with the existing circuit design. Cross-compatibility claims should be validated through independent testing.

PJT7808_R2_00001PJT7808_R2_00001

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