PJX8838_R1_00001

$0.32

Description：MOSFET 2N-CH 50V 0.36A SOT563
Series：-

SKU:327d0d7076f0 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.36A SOT563
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
Rds On (Max) @ Id, Vgs：1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.95nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：36pF @ 25V
Power - Max：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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PJX8838_R1_00001

Overview

The PJX8838_R1_00001 is a dual N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-563 package. It features a Drain-Source Voltage (VDS) of 50 V and a Continuous Drain Current (ID) of 360 mA. The device incorporates advanced trench process technology for low on-resistance, with RDS(on) values ranging from less than 1.45 Ω at VGS=10V to less than 6.0 Ω at VGS=1.8V. It includes ESD protection rated at 2 kV HBM and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Dual N-Channel configuration housed in a compact SOT-563 surface-mount package
Advanced Trench Process Technology designed for low voltage drive applications
Integrated Electrostatic Discharge (ESD) protection rated at 2 kV Human Body Model
Lead-free construction compliant with EU RoHS 2.0 directives

Applications

Relay driver circuits
Speed line drive systems
Battery operated systems

Procurement Notes

Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging quantities and tape-and-reel specifications. Confirm that the component meets required environmental standards such as halogen-free molding compounds before finalizing procurement orders for production integration.

Selection Notes

Select this component for low-voltage switching applications requiring high reliability and integrated ESD protection. Evaluate the thermal resistance characteristics and power dissipation limits relative to the expected ambient operating conditions to ensure safe operation within the specified maximum junction temperature range.

Part Context

This part belongs to the NFET-50TEMN series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The manufacturer specializes in discrete semiconductors including MOSFETs, Schottky diodes, and SiC devices for automotive, industrial, and consumer electronics markets.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' components for direct replacement.