PMBFJ112,215

Description：JFET N-CH 40V SOT23
Series：-

SKU:947a1009bedf Category: JFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 40V SOT23
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：40 V
Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：5 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：6pF @ 10V (VGS)
Resistance - RDS(On)：50 Ohms
Power - Max：300 mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23 (TO-236AB)
Grade：-
Qualification：-

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PMBFJ112,215

Overview

The PMBFJ112,215 is an N-channel junction FET housed in a SOT23 plastic surface-mounted package. It features interchangeable drain and source connections for flexible circuit design. Key electrical parameters include a maximum drain-source voltage of ±40 V and a gate-source breakdown voltage of -40 V. The device exhibits a drain-source on-state resistance (RDSon) of up to 50 Ω at zero gate voltage. Static characteristics specify a gate-source leakage current of -1 nA at -15 V and a drain-source leakage current of 5 µA at 15 V. Dynamic performance includes an input capacitance of 28 pF and turn-on/turn-off times of 13 ns and 35 ns respectively under specified test conditions.

Feature Summary

High-speed switching capability suitable for rapid signal processing applications
Interchangeable drain and source terminals allowing flexible PCB layout orientation
Low on-state resistance at zero gate voltage facilitating efficient signal conduction

Applications

Analog switches
Choppers
Commutators
Multiplexers
Thin and thick film hybrids

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component status remains active for production use. Ensure compatibility with standard SOT23 footprint dimensions during the design phase. Review the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics prior to finalizing the bill of materials.

Selection Notes

Select this component when symmetrical N-channel JFET behavior is required in a compact surface-mount form factor. Consider the 50 Ω RDSon limit for low-current analog signal paths. Evaluate the ±40 V voltage rating against system operating limits. Compare dynamic switching speeds against application timing requirements. Verify pinout compatibility if replacing existing designs using similar JFET packages.

Part Context

This part belongs to the PMBFJ111/112/113 family of symmetrical N-channel junction FETs. All variants share the same SOT23 package and general structural features. The PMBFJ112 serves as a middle-ground option between the lower resistance PMBFJ111 and higher resistance PMBFJ113. This family is designed for general-purpose analog switching and signal routing tasks in electronic circuits.