PMCPB5530XAX

$0.68

Description：MOSFET N/P-CH 20V 4.5A 6HUSON
Series：-

SKU:95b2ea622935 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 4.5A 6HUSON
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 3.6A (Ta)
Rds On (Max) @ Id, Vgs：34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V, 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：619pF @ 10V, 785pF @ 10V
Power - Max：490mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UFDFN Exposed Pad
Supplier Device Package：6-HUSON (2x2)
Grade：Automotive
Qualification：AEC-Q101

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PMCPB5530XAX

Overview

The PMCPB5530XAX is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a DFN2020-6 (SOT1118) package. The N-channel device supports a drain-source voltage of 20 V and continuous current up to 4.5 A, with a typical on-resistance of 26 mΩ. The P-channel counterpart handles -20 V and -3.6 A, featuring a typical on-resistance of 50 mΩ. Both transistors operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Complementary N/P-channel configuration for efficient half-bridge and synchronous rectification applications
Trench MOSFET technology enabling low threshold voltage and very fast switching speeds
Leadless ultra-thin plastic package with exposed drain pad for superior thermal conduction

Applications

DC to DC conversion
High-speed line driver
High/Low-side load switch
Switching circuits

Procurement Notes

Verify the specific suffix 'AX' against the manufacturer's official ordering information to confirm reel packaging specifications. Ensure design compliance with AEC-Q101 automotive qualification requirements if deploying in vehicle electronics. Confirm thermal management aligns with the specified junction-to-ambient resistance values for the target PCB footprint.

Selection Notes

Select this component for designs requiring a compact dual-transistor solution with high thermal efficiency. The low gate charge and fast switching characteristics make it suitable for high-frequency power conversion. Evaluate the on-resistance at the intended operating gate voltage to ensure adequate drive capability and minimize conduction losses in the final application.

Part Context

This part belongs to Nexperia's portfolio of small-signal and logic level MOSFETs designed for space-constrained surface-mount applications. It integrates both N-channel and P-channel devices into a single leadless package, reducing board space compared to discrete components while maintaining robust performance for general-purpose switching tasks.

Replacement Considerations

PMCPB5530XA

FAQ

What is the maximum peak drain current for the N-channel transistor?

The maximum peak drain current for the N-channel transistor (TR1) is 48 A under single-pulse conditions with a pulse width less than or equal to 10 µs.

Does the PMCPB5530XAX support automotive applications?

Yes, the product has been qualified in accordance with the Automotive Electronics Council standard Q101, making it suitable for use in automotive applications.