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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.5A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 12A (Tc)
- Rds On (Max) @ Id, Vgs：34mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：619pF @ 10V
- Power - Max：640mW (Ta), 11W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PMDPB30XNA is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a DFN2020-6 (SOT1118) leadless package with dimensions of 2 x 2 x 0.65 mm. Key electrical parameters include a drain-source voltage of 20 V, a continuous drain current of 4.5 A at 25 °C, and a typical on-state resistance of 26 mΩ at VGS = 4.5 V. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Trench MOSFET technology providing low threshold voltage and very fast switching capabilities
- Leadless ultra-thin SMD plastic package with exposed drain pad for excellent thermal conduction
- Qualified according to AEC-Q101 standards for automotive applications
Applications
- DC to DC conversion
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and reel specifications. Confirm that the component meets the required AEC-Q101 qualification status if intended for automotive use. Ensure the design accounts for the thermal characteristics defined in the datasheet for the selected PCB footprint.
Selection Notes
Select this component for designs requiring compact dual N-channel switching solutions with high thermal efficiency. The low on-state resistance supports efficient power management in portable devices. Verify that the gate drive voltage aligns with the specified threshold and on-state resistance conditions for optimal performance.
Part Context
This part belongs to Nexperia's portfolio of small signal and logic MOSFETs designed for space-constrained applications. The DFN2020-6 package is part of the HUSON family, offering enhanced thermal performance compared to traditional leaded packages while maintaining a minimal footprint suitable for dense PCB layouts.
Replacement Considerations
PMDPB30XNAX
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDS) is rated at 20 V.
Is this component qualified for automotive applications?
Yes, the PMDPB30XNA is qualified in accordance with the AEC-Q101 standard.
What is the typical total gate charge?
The typical total gate charge (QG(tot)) is 6.6 nC under standard test conditions.
