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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2.7A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.7A
- Rds On (Max) @ Id, Vgs：102mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：550pF @ 10V
- Power - Max：485mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
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Overview
The PMDPB80XP is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in an ultra-thin DFN2020-6 (SOT1118) package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of 20 V and a continuous drain current of 3.7 A at 25 °C. Key electrical parameters include a maximum RDSon of 102 mΩ at VGS = -4.5 V, a gate-source threshold voltage ranging from -0.4 V to -1 V, and a total gate charge of 8.6 nC.
Feature Summary
- Trench MOSFET technology enables low on-state resistance suitable for low voltage gate drive applications.
- Ultra-thin leadless SMD plastic package provides excellent thermal conduction via an exposed drain pad.
Applications
- Charging switch for portable devices
- DC/DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and computing power management
Procurement Notes
Verify the component marking code '1U' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the specified package variant. Confirm that the application environment remains within the stated junction temperature limits and absolute maximum ratings defined in the official Nexperia documentation.
Selection Notes
Select this component when space constraints require an ultra-thin footprint with high thermal efficiency. The low RDSon rating supports efficient power switching in portable electronics. Verify that the required gate drive voltage aligns with the specified threshold characteristics for optimal performance.
Part Context
This dual FET integrates two independent P-channel transistors into a single compact package. The design reduces PCB area compared to discrete solutions. The exposed drain pad facilitates heat dissipation, supporting reliable operation in thermally constrained environments typical of modern portable electronic devices.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDS) is rated at 20 V.
How does the package facilitate thermal management?
The DFN2020-6 package features an exposed drain pad designed for excellent thermal conduction to the PCB.
What is the typical gate-source threshold voltage?
The typical gate-source threshold voltage (VGSth) is -0.6 V under standard test conditions.
