PMDT290UNE,115

$0.42

Description：MOSFET 2N-CH 20V 0.8A SOT666
Series：TrenchMOS™

SKU:79e5eedca43c Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.8A SOT666
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：800mA
Rds On (Max) @ Id, Vgs：380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：83pF @ 10V
Power - Max：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-666
Grade：Automotive
Qualification：AEC-Q101

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PMDT290UNE,115

Overview

The PMDT290UNE,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of 20 V and a continuous drain current of 800 mA per transistor at 25 °C. The device features a maximum on-state resistance of 380 mΩ at VGS = 4.5 V and ID = 500 mA. Total power dissipation is rated at 500 mW at 25 °C ambient temperature. The component is housed in an SOT666 surface-mounted package.

Feature Summary

Very fast switching performance enabled by Trench MOSFET technology
Integrated electrostatic discharge protection up to 2 kV

Applications

Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for applications requiring compact dual N-channel switching solutions. The SOT666 package provides a small footprint suitable for space-constrained designs. Ensure thermal management aligns with the specified total power dissipation limits under expected operating conditions.

Part Context

This part belongs to Nexperia's portfolio of ultra-small and flat lead Surface-Mounted Device plastic packages. It utilizes Trench MOSFET technology to achieve low on-resistance and fast switching speeds within a minimal physical envelope compared to traditional discrete transistors.