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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.8A SOT666
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：83pF @ 10V
- Power - Max：330mW (Ta), 1.09W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PMDT290UNE is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of 20 V and a continuous drain current of 800 mA at 25 °C. The device features a typical on-state resistance of 290 mΩ at VGS = 4.5 V and ID = 500 mA. Total gate charge is typically 0.45 nC, supporting fast switching capabilities. It is housed in an SOT666 surface-mount package with six leads.
Feature Summary
- Very fast switching performance enabled by Trench MOSFET technology
- Integrated electrostatic discharge protection up to 2 kV HBM
- Ultra-small and flat lead plastic package design
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets the required environmental standards for the intended application environment before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring compact dual N-channel switching solutions. Ensure the gate drive voltage supports the specified threshold characteristics for optimal conduction. Verify thermal management requirements align with the junction-to-ambient thermal resistance values provided in the datasheet.
Part Context
This part belongs to Nexperia's TrenchMOS family of dual N-channel enhancement mode FETs. It is designed for surface-mount assembly in ultra-small plastic packages. The product utilizes advanced trench technology to achieve low on-state resistance and fast switching speeds within a minimal footprint.
Replacement Considerations
PMDT290UNE,115
FAQ
Is the PMDT290UNE automotive qualified?
No, the product data sheet revision history indicates the product was changed to non-automotive qualification.
What is the maximum peak drain current?
The maximum peak drain current is 3.2 A under single pulse conditions with a duration of 10 µs or less at 25 °C.
What is the operating temperature range?
The junction temperature range is -55 °C to +150 °C.
