PMDXB1200UPEZ

Overview

The PMDXB1200UPE is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless ultra small DFN1010B-6 (SOT1216) plastic package measuring 1.1 x 1.0 x 0.37 mm. The device features a drain-source voltage of -30 V and a gate-source voltage range of -8 to 8 V. Each transistor supports a continuous drain current of -410 mA at 25 °C, with a peak current of -1.7 A. The typical on-state resistance is 1.2 Ω at VGS = -4.5 V. Total power dissipation reaches 285 mW in free air.

Feature Summary

• Dual configuration integrating two independent P-channel transistors within a single compact footprint.
• Trench MOSFET architecture providing low threshold voltage for efficient logic-level gate drive compatibility.
• Leadless ultra thin surface-mount design optimized for high-density circuit board layouts.

Applications

• Relay driver circuits
• High-speed line drivers
• High-side load switches
• General switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging format and tape-and-reel specifications. Confirm that the component status remains active production rather than obsolete or end-of-life. Ensure the procurement channel provides valid traceability data consistent with Nexperia quality standards.

Selection Notes

Select this component when space constraints require dual P-channel functionality in an ultra-thin profile. The low threshold voltage makes it suitable for applications driven by standard logic levels. Evaluate thermal performance based on the specified junction-to-ambient resistance values for your specific PCB copper area and mounting conditions.

Part Context

This device belongs to Nexperia's portfolio of TrenchMOS FETs designed for general-purpose power switching. It utilizes advanced trench technology to achieve low on-resistance within a miniature leadless package. The dual configuration allows for cost-effective implementation of bridge or high-side switching topologies in portable and industrial electronics.

Replacement Considerations

Direct replacements must match the dual P-channel topology, -30 V rating, and SOT1216 package dimensions. Verify equivalent RDSon characteristics and pinout compatibility before substitution.

FAQ

What is the maximum junction temperature for the PMDXB1200UPE?

The maximum junction temperature is 150 °C.

Does the PMDXB1200UPE include internal ESD protection?

Yes, the device includes ElectroStatic Discharge protection rated above 2 kV HBM.

What is the package type for this component?

It uses a leadless ultra small DFN1010B-6 plastic package, also known as SOT1216.