PMDXB950UPELZ

Overview

The PMDXB950UPELZ is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN1010B-6 (SOT1216) package measuring 1.1 × 1.0 × 0.37 mm. Key electrical parameters include a drain-source voltage of -20 V, a continuous drain current of -500 mA at 25 °C, and a typical drain-source on-state resistance of 1.02 Ω. The device features an exposed drain pad for thermal management and offers ESD protection exceeding 1 kV HBM.

Feature Summary

• Trench MOSFET technology provides low leakage current and efficient switching performance.
• Leadless ultra-small and ultra-thin SMD plastic package enables high-density circuit designs.
• Exposed drain pad ensures excellent thermal conduction from the junction to the PCB.

Applications

• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental and reliability standards for the intended application before finalizing procurement orders.

Selection Notes

Select this component for applications requiring compact dual P-channel switching with low on-resistance. Ensure the design accommodates the thermal requirements associated with the DFN1010B-6 package and utilizes the exposed drain pad for effective heat dissipation.

Part Context

This part belongs to Nexperia's Trench MOSFET series, designed for space-constrained surface-mount applications. The DFN1010B-6 package is optimized for thermal performance and mechanical stability in small outline form factors.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and package dimensions.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is rated at 8 V and -8 V.

Does the device include internal ESD protection?

Yes, the device provides ElectroStatic Discharge (ESD) protection greater than 1 kV HBM.

What is the typical total gate charge?

The typical total gate charge (QG(tot)) is 1.19 nC under standard test conditions.