PMDXB950UPEZ

$0.43

Description：MOSFET 2P-CH 20V 0.5A 6DFN
Series：-

SKU:b03c4e0efd08 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.5A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：500mA
Rds On (Max) @ Id, Vgs：1.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：43pF @ 10V
Power - Max：265mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：DFN1010B-6
Grade：-
Qualification：-

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PMDXB950UPEZ

Overview

The PMDXB950UPEZ is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm. Key electrical parameters include a drain-source voltage of -20 V, continuous drain current of -500 mA at 25 °C, and typical on-state resistance of 1.02 Ω. The device features an exposed drain pad for thermal management, ESD protection exceeding 1 kV HBM, and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Trench MOSFET technology for optimized performance
Leadless ultra-small and ultra-thin SMD plastic package
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection greater than 1 kV HBM

Applications

Relay driver
High-speed line driver
High-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component version matches the required product data sheet revision. Confirm that the intended application environment falls within the specified operating temperature and voltage limits defined in the datasheet.

Selection Notes

Select this component for designs requiring a compact dual P-channel solution with low on-resistance. The DFN1010B-6 package is suitable for space-constrained PCB layouts. Consider the thermal resistance characteristics when designing heat dissipation paths, particularly given the exposed drain pad requirement for optimal performance.

Part Context

This part belongs to Nexperia's Trench MOSFET series, designed for efficient power switching in small form factors. The dual configuration allows for independent control of two channels within a single footprint, simplifying circuit design for applications like load switching and signal driving where multiple P-channel devices are needed.