PMGD175XNEAX

Description：MOSFET 2N-CH 30V 0.9A 6TSSOP
Series：-

SKU:eb828a63d4e6 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.9A 6TSSOP
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
Rds On (Max) @ Id, Vgs：252mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：81pF @ 15V
Power - Max：390mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：6-TSSOP
Grade：-
Qualification：-

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PMGD175XNEAX

Overview

The PMGD175XNEAX is a dual N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology within a compact SOT363 (TSSOP6) surface-mounted plastic package. The device features a drain-source voltage rating of 30 V and a continuous drain current of 0.9 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 252 mΩ at VGS = 4.5 V and ID = 0.9 A, with a typical gate charge of 1.05 nC. It supports junction temperatures up to 150 °C and includes electrostatic discharge protection exceeding 2 kV HBM.

Feature Summary

Dual N-channel configuration in a very small SOT363 surface-mounted package
Low threshold voltage for logic-level compatibility
Very fast switching performance enabled by Trench MOSFET technology
Electrostatic discharge protection rated above 2 kV Human Body Model

Applications

Relay driver circuits
High-speed line drivers
Low-side load switches
General switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets the required automotive qualification standards if intended for AEC-Q101 applications. Ensure the requested part number matches the exact marking code C6% to guarantee authenticity and traceability during procurement.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution with low on-state resistance. The Trench MOSFET technology provides fast switching speeds suitable for high-frequency applications. Consider the thermal characteristics and power dissipation limits when designing heat management strategies for the SOT363 package in constrained spaces.

Part Context

This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for space-constrained electronics. The SOT363 package allows for high-density PCB layouts. The product is qualified according to AEC-Q101 standards, making it suitable for demanding automotive environments alongside consumer and industrial applications requiring reliable switching performance.

Replacement Considerations

Direct replacements must match the 30 V rating, dual N-channel configuration, and SOT363 footprint. Verify pinout compatibility and ensure equivalent RDS(on) and switching speed characteristics are maintained to avoid circuit performance degradation.