PMGD400UN,115

Overview

The PMGD400UN,115 is a dual N-channel MOSFET manufactured by Nexperia. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 280 mA at 25°C. The device utilizes a TSSOP-6 surface-mount package with a body size of 1.95x1.6mm. Key electrical characteristics include a maximum on-resistance of 3.7 Ohms at a gate-source voltage of 4.5V. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Dual N-channel configuration in a compact SOT-363 compatible package
• Low on-resistance for efficient power switching applications
• High thermal stability supporting extended industrial temperature ranges

Applications

• Load switching in portable consumer electronics
• Power management circuits in mobile devices
• General purpose low-side switching applications

Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm tape and reel specifications. Confirm RoHS compliance status directly with the manufacturer as regulatory requirements may vary by production batch. Ensure the ordering code matches the exact package variant required for the PCB footprint.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. Compare the 40V rating and 280mA current limit against circuit demands. Evaluate the 3.7 Ohm on-resistance for acceptable power dissipation levels in the target application environment.

Part Context

This part belongs to the PMGD series of dual MOSFETs from Nexperia. These components are designed for space-constrained designs requiring multiple switching elements. The series offers a balance of performance and packaging density suitable for modern electronic devices.

Replacement Considerations

Check for direct pin-compatible alternatives within the Nexperia portfolio that share the same package dimensions and electrical ratings. Verify functional equivalence before substitution.