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PMV33UPE,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 20V 4.4A TO236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMV33UPE,215
- Description：MOSFET P-CH 20V 4.4A TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：36mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.1 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1820 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for PMV33UPE,215
Single FETs, MOSFETs Overview
The PMV33UPE,215 is a single P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in an SOT-23 (TO-236AB) surface-mounted plastic package. The device features a drain-source voltage rating of 20 V and a continuous drain current capability of 5.3 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 36 mΩ at VGS = -4.5 V and ID = -3 A, with a typical gate charge of 14.7 nC. It operates within a junction temperature range of -55 °C to +150 °C and includes 2 kV ESD protection.
Single FETs, MOSFETs Feature Summary
- Utilizes Trench MOSFET technology for low threshold voltage and very fast switching performance.
- Integrated electrostatic discharge protection rated at 2 kV according to Human Body Model standards.
Single FETs, MOSFETs Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact P-channel solution with low on-resistance and high switching speed. Ensure the design accounts for the 20 V drain-source voltage limit and thermal dissipation requirements, particularly when operating near the maximum junction temperature or utilizing peak drain currents exceeding continuous ratings.
Single FETs, MOSFETs Part Context
This part belongs to the Nexperia PMV series of small-signal MOSFETs designed for general-purpose switching applications. The PMV33UPE specifically addresses the need for efficient power control in space-constrained designs, leveraging Trench technology to minimize conduction losses while maintaining robust ESD handling capabilities suitable for sensitive electronic interfaces.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for verified cross-reference data. No public substitute part numbers are confirmed in the provided source material.
Single FETs, MOSFETs FAQ
What is the pin configuration for the PMV33UPE?
Pin 1 is the Gate, Pin 2 is the Source, and Pin 3 is the Drain.
Is the PMV33UPE automotive qualified?
No, unless explicitly stated otherwise in the datasheet, this product is not suitable for automotive use and has not been tested according to automotive specifications.
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