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PN3638A_D75Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 25V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.
The PN3638A_D75Z is a PNP silicon general-purpose amplifier and switch manufactured by onsemi. It features a collector-emitter breakdown voltage of 25 V, a continuous collector current rating of 800 mA, and a total device dissipation of 625 mW at 25°C. The component operates within a junction temperature range of -55°C to +150°C. It utilizes a TO-92 package with three leads.
Verify the specific D75Z suffix against official documentation to confirm tape and reel packaging orientation and lead configuration. Confirm RoHS compliance status through the manufacturer's latest environmental declarations. Ensure the part number matches the exact datasheet revision for accurate electrical parameter validation before integration into designs.
Select this component for low-voltage PNP switching tasks where moderate current handling is required. Compare DC current gain and saturation voltage characteristics against circuit requirements. Consider thermal resistance values for heat dissipation planning in enclosed environments. Verify compatibility with existing TO-92 footprint constraints.
This device belongs to the PN3638 series of PNP bipolar junction transistors. It shares functional similarities with the PN2907A but offers distinct electrical characteristics defined by its specific process technology. The series is intended for discrete power and signal applications in consumer and industrial electronics.
Consult the datasheet for direct substitutes such as the PN2907A. Verify pinout compatibility and electrical limits before substitution. Cross-reference with other PNP transistors in the TO-92 package if sourcing availability is limited.
The absolute maximum continuous collector current (IC) is rated at 800 mA.
The collector-emitter breakdown voltage (V(BR)CEO) is 25 V when IC is 10 mA and IB is 0.
The operating and storage junction temperature range is -55°C to +150°C.
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