PSMN005-75B,118

Single FETs, MOSFETs Overview

The PSMN005-75B is an N-channel TrenchMOS SiliconMAX standard level Field-Effect Transistor (FET) in a D2PAK plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C. The device exhibits a typical on-state resistance of 4.35 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 230 W at a mounting base temperature of 25 °C. Key dynamic parameters include a total gate charge of 165 nC and a gate-drain charge of 50 nC.

Single FETs, MOSFETs Feature Summary

• Low conduction losses due to low on-state resistance
• Suitable for high frequency applications due to fast switching characteristics

Single FETs, MOSFETs Applications

• High frequency computer motherboard DC-to-DC convertors
• OR-ing applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration, as indicated by the part number structure. Confirm that the component status remains active production via official Nexperia channels before finalizing design-in decisions. Ensure compliance with RoHS directives and check for any REACH SVHC substance declarations relevant to the manufacturing batch.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling capabilities within a 75 V system architecture. The D2PAK package provides robust thermal performance suitable for power management circuits. Evaluate the junction-to-mounting base thermal resistance against the expected heat dissipation requirements of the target application environment.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's TrenchMOS SiliconMAX family, utilizing advanced trench technology to enhance efficiency. It is designed for computing, communications, consumer, and industrial applications. The product utilizes a three-lead surface-mounted plastic package with one lead cropped, optimizing board space while maintaining high power density.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout compatibility without verifying electrical parameter alignment.