PSMN012-60HLX

Overview

The Nexperia PSMN012-60HLX is a dual logic level N-channel MOSFET in an LFPAK56D (SOT1205) package. It utilizes TrenchMOS technology enhanced for repetitive avalanche events, rated for up to 1 billion cycles. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 12.5 mΩ at VGS = 5 V and 25 °C, rising to 28.3 mΩ at 175 °C. Total gate charge is typically 22.4 nC. The device supports a junction temperature range from -55 °C to +175 °C with a total power dissipation of 64 W.

Feature Summary

• Dual N-channel configuration within a single LFPAK56D copper-clip package
• Enhanced silicon technology designed for high reliability under repetitive avalanche stress
• Logic level gate drive capability optimized for standard control sources

Applications

• Brushless DC and Brushed DC motor control
• DC-to-DC converters
• High-performance synchronous rectification

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Cross-reference the marking code '12RL60H' with the datasheet to authenticate the physical device upon receipt. Ensure design-in compatibility with the specified LFPAK56D footprint dimensions.

Selection Notes

Select this component when a dual-channel solution is required in a compact surface-mount form factor. The logic level gate threshold allows direct driving from standard 5 V logic controllers without additional gate drivers. The enhanced avalanche ruggedness makes it suitable for inductive load switching applications where transient energy spikes are expected during operation.

Part Context

This part belongs to Nexperia's NextPower S3 portfolio, utilizing TrenchMOS technology. It is distinct from standard single-channel MOSFETs by integrating two independent channels in one package. The LFPAK56D variant offers improved thermal performance compared to traditional plastic packages due to its copper clip construction.

Replacement Considerations

Direct replacements must match the LFPAK56D (SOT1205) 8-lead package outline and pinout. Verify that substitute parts support the same 60 V rating and comparable on-resistance values. Check if alternative components offer similar repetitive avalanche ratings if operating in high-stress environments.

FAQ

What is the maximum number of repetitive avalanche events the PSMN012-60HL can withstand?

The device is tested and qualified to withstand up to 1 billion repetitive avalanche events.

How does the on-state resistance change at elevated temperatures?

At a junction temperature of 175 °C, the typical RDS(on) increases to 28.3 mΩ, compared to 12.5 mΩ at 25 °C.

Is this component automotive qualified?

No, unless explicitly stated otherwise in specific product bulletins, this product is not automotive qualified and is intended for industrial and consumer applications.